Conduction Tuning of Graphene Based on Defect-Induced Localization

被引：74

作者：

Nakaharai, Shu ^{[1
]}

Iijima, Tomohiko ^{[2
]}

Ogawa, Shinichi ^{[3
]}

Suzuki, Shingo ^{[1
]}

Li, Song-Lin ^{[4
]}

Tsukagoshi, Kazuhito ^{[4
]}

Sato, Shintaro ^{[1
]}

Yokoyama, Naoki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sdence & Technol AIST, GNC, Tsukuba, Ibaraki 3058569, Japan

[2] Natl Inst Adv Ind Sdence & Technol AIST, ICAN, Tsukuba, Ibaraki 3058569, Japan

[3] Natl Inst Adv Ind Sdence & Technol AIST, Nanoelect Res Inst NeRI, Tsukuba, Ibaraki 3058569, Japan

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

ACS NANO | 2013年 / 7卷 / 07期

基金：

日本学术振兴会;

关键词：

graphene; carrier transport; ion irradiation; defect; helium ion microscope; transport gap; strong localization; FUNCTIONALIZATION; BANDGAP; HYDROGENATION; CHLORINATION; SPECTROSCOPY; TRANSITION; ROUTE;

D O I：

10.1021/nn401992q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The conduction properties of graphene were tuned by tailoring the lattice by using an accelerated helium ion beam to embed low-density defects in the lattice. The density of the embedded defects was estimated to be 2-3 orders of magnitude lower than that of carbon atoms, and they functionalized a graphene sheet in a more stable manner than chemical surface modifications can do. Current modulation through back gate biasing was demonstrated at room temperature with a current on off ratio of 2 orders of magnitude, and the activation energy of the thermally activated transport regime was evaluated. The exponential dependence of the current on the length of the functionalized region in graphene suggested that conduction tuning is possible through strong localization of carriers at sites induced by a sparsely distributed random potential modulation.

引用

页码：5694 / 5700

页数：7

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