Metallic Nanowires by Full Wafer Stencil Lithography

被引：90
|
作者：
Vazquez-Mena, O. [1 ]
Villanueva, G. [1 ]
Savu, V. [1 ]
Sidler, K. [1 ]
van den Boogaart, M. A. F. [1 ]
Brugger, J. [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Microsyst Lab, CH-1015 Lausanne, Switzerland
来源：
NANO LETTERS | 2008年 / 8卷 / 11期
基金：
瑞士国家科学基金会;
关键词：
D O I：
10.1021/nl801778t
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resistivity of the wires were studied. Nanowires down to 70 nm wide and 5 mu m long have been achieved showing a resistivity of 10 mu Omega cm for Al and 5 mu Omega cm for Au and maximum current density of similar to 10(8) A/cm(2). This proves the capability of stencil lithography for the fabrication of metallic nanowires on a full wafer scale.
引用
收藏
页码：3675 / 3682
页数：8
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