Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

被引：0

作者：

Wipf, Selin Tolunay ^{[1
]}

Goeritz, Alexander ^{[1
]}

Wietstruck, Matthias ^{[1
]}

Cirillo, Maurizio ^{[1
]}

Wipf, Christian ^{[1
]}

Zoschke, Kai ^{[2
]}

Kaynak, Mehmet ^{[1
,3
]}

机构：

[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[2] Fraunhofer IZM, Gustav Meyer Allee 25, D-13355 Berlin, Germany

[3] Sabanci Univ, TR-34956 Istanbul, Turkey

来源：

2017 IMAPS NORDIC CONFERENCE ON MICROELECTRONICS PACKAGING (NORDPAC) | 2017年

关键词：

BiCMOS; RF-MEMS; SPST; packaging;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25 mu m SiGe BiCMOS technology for K-band (18-27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Omega.cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.

引用

页码：31 / 34

页数：4

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