Photocurrent enhancement of SnO2 nanowires through Au-nanoparticles decoration

被引:52
作者
Lin, Cheng-Hua [1 ]
Chen, Tzung-Tc [1 ]
Chen, Yang-Fang [1 ]
机构
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
关键词
D O I
10.1364/OE.16.016916
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
It is found that the sensitivity of photoresponse of SnO2 nanowires can be enhanced by metallic particles decoration. The underlying mechanism is attributed to the formation of the Schottky junction on nanowires surface in the vicinity of metallic nanoparticles. The increment in the barrier height and width of space charge region due to the existence of Schottky junction increases the surface electric field and enhances the spatial separation effect, which then prolongs the lifetime of photoinduced electron and consequently increases the photoresponse gain. The result shown here provides an alternative route for enhancing the photoresponse of semiconductor nanostructures, which should be useful for creating highly sensitive photodetectors. (C) 2008 Optical Society of America
引用
收藏
页码:16916 / 16922
页数:7
相关论文
共 16 条
[1]   Electrical transport properties of single GaN and InN nanowires [J].
Chang, CY ;
Chi, GC ;
Wang, WM ;
Chen, LC ;
Chen, KH ;
Ren, F ;
Pearton, SJ .
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) :738-743
[2]   Ultrahigh photocurrent gain in m-axial GaN nanowires [J].
Chen, Reui-San ;
Chen, Hsin-Yi ;
Lu, Chien-Yao ;
Chen, Kuei-Hsien ;
Chen, Chin-Pei ;
Chen, Li-Chyong ;
Yang, Ying-Jay .
APPLIED PHYSICS LETTERS, 2007, 91 (22)
[3]   Observing catalysis through the agency of the participating electrons: Surface-chemistry-induced current changes in a tin oxide nanowire decorated with silver [J].
Chen, X. H. ;
Moskovits, M. .
NANO LETTERS, 2007, 7 (03) :807-812
[4]   Room temperature gas sensitivity of ultrathin SnO2 films prepared from Langmuir-Blodgett film precursors [J].
Choudhury, Sipra ;
Betty, C. A. ;
Girija, K. G. ;
Kulshreshtha, S. K. .
APPLIED PHYSICS LETTERS, 2006, 89 (07)
[5]   Nanoengineered chemiresistors:: the interplay between electron transport and chemisorption properties of morphologically encoded SnO2 nanowires [J].
Dmitriev, Serghei ;
Lilach, Yigal ;
Button, Bradly ;
Moskovits, Martin ;
Kolmakov, Andrei .
NANOTECHNOLOGY, 2007, 18 (05)
[6]   Room-temperature low-power hydrogen sensor based on a single tin dioxide nanobelt [J].
Fields, L. L. ;
Zheng, J. P. ;
Cheng, Y. ;
Xiong, P. .
APPLIED PHYSICS LETTERS, 2006, 88 (26)
[7]   Photoconductive gain modelling of GaN photoconductors [J].
Garrido, JA ;
Monroy, E ;
Izpura, I ;
Munoz, E .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (06) :563-568
[8]   Enhanced gas sensing by individual SnO2 nanowires and nanobelts functionalized with Pd catalyst particles [J].
Kolmakov, A ;
Klenov, DO ;
Lilach, Y ;
Stemmer, S ;
Moskovits, M .
NANO LETTERS, 2005, 5 (04) :667-673
[9]   Annealing effect on the structural and magnetic properties of La0.7Sr0.3MnO3 films -: art. no. 123505 [J].
Li, T ;
Wang, B ;
Dai, HY ;
Du, YS ;
Yan, H ;
Liu, YP .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)
[10]  
Liu YK, 2001, ADV MATER, V13, P1883, DOI 10.1002/1521-4095(200112)13:24<1883::AID-ADMA1883>3.0.CO