Improving Spin-Transport by Disorder

被引：32

作者：

Chadov, Stanislav ^{[1
,2
]}

Kiss, Janos ^{[1
,2
]}

Felser, Claudia ^{[1
,2
]}

机构：

[1] Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany

[2] Johannes Gutenberg Univ Mainz, Inst Anorgan Chem & Analyt Chem, D-55099 Mainz, Germany

来源：

ADVANCED FUNCTIONAL MATERIALS | 2013年 / 23卷 / 07期

关键词：

electron localization; spin-transport; magnetoresistance; conductivity; COHERENT-POTENTIAL APPROXIMATION; HALF-METALLIC FERRIMAGNETISM; CONSISTENT CLUSTER CPA; HEUSLER ALLOYS; ELECTRONIC-STRUCTURE; ANDERSONS MODEL; RANDOM LATTICES; LOCALIZATION; SPINTRONICS; PREDICTION;

D O I：

10.1002/adfm.201201693

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new scheme dedicated to improving spin-transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half-metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn3Ga by substituting Mn with a 3d-transition metal.

引用

页码：832 / 838

页数：7

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