Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons

被引：7
作者：
Shindome, Aya [1 ,3 ]
Doioka, Yu [1 ,3 ]
Beppu, Nobuyasu [1 ,3 ]
Oda, Shunri [2 ]
Uchida, Ken [1 ,3 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Tokyo 1528552, Japan
[3] Keio Univ, Dept Elect & Elect Engn, Yokohama, Kanagawa 2238522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
基金：
日本学术振兴会;
关键词：
BANDGAP; DEVICES;
D O I：
10.7567/JJAP.52.04CN05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two-terminal mono-and multilayer graphene nanoribbon resistive random access memories (ReRAMs) are experimentally demonstrated. Fundamental ReRAM properties, device scalability, and width dependence with device scaling are investigated. The lower switching energy is obtained for smaller channel width, indicating the suitability of graphene nanoribbons for high-density LSIs. Operation mechanism is studied by changing the type of contact metal and the number of graphene layers as well as by performing physical analysis by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). Then, it is suggested that the mechanism is the chemical bonding-state change of graphene. (C) 2013 The Japan Society of Applied Physics
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页数：5
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