Linearity and third-order intermodulation distortion in DFB semiconductor lasers

被引：30

作者：

Chen, JY ^{[1
]}

Ram, RJ

Helkey, R

机构：

[1] MIT, Elect Res Lab, Cambridge, MA 02139 USA

[2] MIT, Lincoln Lab, Lexington, MA 02173 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 08期

关键词：

distributed feedback lasers; intermodulation distortion; optical fiber communications; semiconductor lasers;

D O I：

10.1109/3.777225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a systematic investigation of the third-order intermodulation distortion characteristics in distributed feedback (DFB) semiconductor lasers. The influence of several nonlinearities, such as longitudinal spatial hole burning, gain compression, and relaxation oscillation, is considered. Detailed analysis shows that it is possible to make different nonlinearities cancel one another to give a low intermodulation distortion by choosing the appropriate DFB structure and facet conditions. Specifically, conditions for cancellation between spatial hole burning and gain compression nonlinearities are introduced.

引用

页码：1231 / 1237

页数：7

共 16 条

[1]

BIHAN JL, 1992, IEEE J QUANTUM ELECT, V28, P899

[2] Transient side-mode suppression in gain-coupled DFB lasers [J].