A study of hot-electron degradation effects in pseudomorphic HEMTs

被引：13

作者：

Cova, P

Menozzi, R

Fantini, F

Pavesi, M

Meneghesso, G

机构：

[1] UNIV PARMA, CTR INTERDIPARTIMENTALE MAT & TECNOL INFORMAZ, I-43100 PARMA, ITALY

[2] UNIV PADUA, DIPARTIMENTO ELETTRON & INFORMAT, I-35131 PADUA, ITALY

来源：

MICROELECTRONICS RELIABILITY | 1997年 / 37卷 / 07期

关键词：

D O I：

10.1016/S0026-2714(96)00274-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain. (C) 1997 Elsevier Science Ltd.

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收藏

页码：1131 / 1135

页数：5

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