Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs)

被引：6
作者：
McMorrow, D [1 ]
Magno, R
Bracker, AS
Bennett, BR
Buchner, S
Melinger, JS
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] SFA Inc, Largo, MD 20774 USA
[3] USN, Res Lab, Washington, DC 20375 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
charge collection; high electron mobility transistor (HEMT); monostable-bistable transition logic element; (MOBILE); resonant interband tunneling diode (RITD); resonant tunneling diode (RTD); single-event effects (SEEs); single-event upset (SEU); transient band bending;
D O I：
10.1109/23.983159
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time-resolved charge-collection measurements performed on AISb/InAs/GaSb resonant interband tunneling diodes (RITDs) with pulsed laser excitation exhibit complex behavior as a function of the device operating point. A model considering conventional charge-collection principles in combination with transient band-bending effects is proposed to describe the experimental results. In the proposed model, a transient distortion of the band structure of the device (transient band bending) induced by holes trapped in the GaSb valence band well modulates the dc current through the RITD. The manner in which this transient modulation is manifested in the experimental observable depends sensitively on the operating point of the device, giving rise to qualitatively different temporal signatures under different dc bias conditions.
引用
收藏
页码：1973 / 1979
页数：7
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