600-V 27-mΩ normally off SiC junction field effect transistors for high-efficiency power supply

被引：5

作者：

Shimizu, Haruka ^{[1
]}

Okino, Hiroyuki ^{[1
]}

Akiyama, Satoru ^{[1
]}

Katoh, Kaoru ^{[2
]}

Yokoyama, Natsuki ^{[1
]}

Ishikawa, Katsumi ^{[2
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1878601, Japan

[2] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 03期

关键词：

Blocking voltage - Gate-leakage current - High-efficiency - Junction field effect transistors - Junction field-effect transistors (JFETs) - Localized current - Oxynitridation - Server power supplies;

D O I：

10.7567/JJAP.53.031303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Normally-off SiC junction field effect transistors (JFETs) with high blocking voltage and low gate leakage current were developed by localized current-path doping (LCD). Numerical simulation of electric field revealed that LCD effectively decreases the on-resistance of SiC JFETs without degrading blocking voltage. On the basis of the obtained simulation results, 600-V 27-m Omega normally off SiC JFETs were fabricated by LDC. The gate leakage current of the fabricated JFETs was suppressed by surface oxynitridation. By applying in a server power supply, we found that these improved JFETs decreased power loss due to FETs by 66%. (C) 2014 The Japan Society of Applied Physics

引用

页数：5

共 22 条

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