Silane activation by Ti(NMe2)4 and NH3 during chemical vapor deposition of Ti-Si-N films

被引：7

作者：

Amato-Wierda, CC ^{[1
]}

Norton, ET ^{[1
]}

Wierda, DA ^{[1
]}

机构：

[1] Univ New Hampshire, Mat Sci Program, Durham, NH 03824 USA

来源：

CHEMISTRY OF MATERIALS | 1999年 / 11卷 / 10期

关键词：

D O I：

10.1021/cm990174j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecular beam mass spectrometry has been used to observe the activation of silane, predominantly in the gas phase, during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)(4), tetrakis(dimethylamido)titanium, silane, and ammonia at 450 degrees C. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)(4) and NH3. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments. RES and XPS were used to determine the atomic composition of these films. The variations of the Ti:Si ratio as a function of Ti(NMe2)(4) and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

引用

页码：2775 / 2779

页数：5

共 49 条

[1]

[Anonymous], PLASMA CHEM PLASMA P

[2] METHANE AND BENZENE ACTIVATION VIA TRANSIENT (TERT-BU3SINH)2ZR=NSI-TERT-BU3 [J].

CUMMINS, CC ;

BAXTER, SM ;

WOLCZANSKI, PT .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (26) :8731-8733

[3] (TRI-TERT-BUTYLSILYL)IMIDO COMPLEXES OF TITANIUM - BENZENE C-H ACTIVATION AND STRUCTURE OF [(TERT-BU3SINH)TI]2(MU-NSI-TERT-BU3)2 [J].

CUMMINS, CC ;

SCHALLER, CP ;

VANDUYNE, GD ;

WOLCZANSKI, PT ;

CHAN, AWE ;

HOFFMANN, R .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1991, 113 (08) :2985-2994

[4] Decomposition pathways for a model TiN chemical vapor deposition precursor [J].

Cundari, TR ;

Morse, JM .

CHEMISTRY OF MATERIALS, 1996, 8 (01) :189-196

[5] SMALL-MOLECULE ELIMINATION FROM GROUP-IVB (TI, ZR, HF) AMIDO COMPLEXES [J].

CUNDARI, TR ;

GORDON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (10) :4210-4217

[6] METHANE ACTIVATION BY GROUP-IVB IMIDO COMPLEXES [J].

CUNDARI, TR .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1992, 114 (26) :10557-10563

[7] MODEL STUDIES OF LOW-TEMPERATURE TITANIUM NITRIDE THIN-FILM GROWTH [J].

DUBOIS, LH .

POLYHEDRON, 1994, 13 (08) :1329-1336

[8] INFRARED STUDIES OF THE SURFACE AND GAS-PHASE REACTIONS LEADING TO THE GROWTH OF TITANIUM NITRIDE THIN-FILMS FROM TETRAKIS(DIMETHYLAMIDO)TITANIUM AND AMMONIA [J].

DUBOIS, LH ;

ZEGARSKI, BR ;

GIROLAMI, GS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) :3603-3609

[9] CHEMICAL VAPOR-DEPOSITION OF TITANIUM, ZIRCONIUM, AND HAFNIUM NITRIDE THIN-FILMS [J].

FIX, R ;

GORDON, RG ;

HOFFMAN, DM .

CHEMISTRY OF MATERIALS, 1991, 3 (06) :1138-1148

[10] SYNTHESIS OF THIN-FILMS BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION USING AMIDO AND IMIDO TITANIUM(IV) COMPOUNDS AS PRECURSORS [J].

FIX, RM ;

GORDON, RG ;

HOFFMAN, DM .

CHEMISTRY OF MATERIALS, 1990, 2 (03) :235-241

← 1 2 3 4 5 →