Comparison of OARE accelerometer data with dopant distribution in Se-doped GaAs crystals grown during USML-1

被引:0
作者
Moskowitz, ME
Bly, JM
Matthiesen, DH
机构
[1] Case Western Reserve University, 420 White Building, Cleveland, OH 44106
基金
美国国家航空航天局;
关键词
microgravity; gallium arsenide; crystal growth; accelerometer;
D O I
10.1016/S0022-0248(96)01086-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Experiments were conducted in the crystal growth furnace (CGF) during the first United States Microgravity Laboratory (USML-1), the STS-50 flight of the Space Shuttle Columbia, to determine the segregation behavior of selenium in bulk GaAs in a microgravity environment. After the flight, the selenium-doped GaAs crystals were sectioned, polished, and analyzed to determine the free carrier concentration as a function of position. One of the two crystals initially exhibited an axial concentration profile indicative of diffusion controlled growth, but this profile then changed to that predicted for a complete mixing type growth. An analytical model, proposed by Naumann [R.J. Naumann, J. Crystal Growth 142 (1994) 253], was utilized to predict the maximum allowable microgravity disturbances transverse to the growth direction during the two different translation rates used for each of the experiments. The predicted allowable acceleration levels were 4.86 mu g for the 2.5 mu m/s furnace translation rate and 38.9 mu g for the 5.0 mu m/s rate. These predicted values were compared to the Orbital Acceleration Research Experiment (OARE) accelerometer data recorded during the crystal growth periods for these experiments. Based on the analysis of the OARE acceleration data and utilizing the predictions from the analytical model, it is concluded that the change in segregation behavior was not caused by any acceleration events in the microgravity environment.
引用
收藏
页码:108 / 111
页数:4
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