Raman spectroscopic analysis of the Ge-As-S chalcogenide glass-forming system

被引：41

作者：

Musgraves, J. David ^{[1
]}

Wachtel, Peter ^{[1
]}

Gleason, Benn ^{[1
]}

Richardson, Kathleen ^{[1
]}

机构：

[1] Clemson Univ, COMSET, Clemson, SC 29634 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2014年 / 386卷

关键词：

Chalcogenide glass; Raman spectroscopy; Network structure; SHORT-RANGE ORDER; TEMPERATURE-DEPENDENCE; SPECTRA; SULFUR;

D O I：

10.1016/j.jnoncrysol.2013.11.031

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The network-level structure of the GexAsyS100 (-) (x) (- y) glass family has been systematically investigated using Raman spectroscopy to probe the supported normal modes. More than 150 samples were melted in the ternary composition space, providing a detailed measure of the glass-forming region of the system. A Raman spectrum norinalization is proposed which permits semi-quantitative evaluation of the glass structure across the composition space of interest. This normalization is employed to compare the network structures evidenced in the chalcogen-rich and -poor regions, as well as the so-called "molecular" region. Application to the in-situ study of structural changes during heat treatment is also demonstrated. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：61 / 66

页数：6

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