Raman spectroscopic analysis of the Ge-As-S chalcogenide glass-forming system

被引：41
|
作者：
Musgraves, J. David [1 ]
Wachtel, Peter [1 ]
Gleason, Benn [1 ]
Richardson, Kathleen [1 ]
机构：
[1] Clemson Univ, COMSET, Clemson, SC 29634 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2014年 / 386卷
关键词：
Chalcogenide glass; Raman spectroscopy; Network structure; SHORT-RANGE ORDER; TEMPERATURE-DEPENDENCE; SPECTRA; SULFUR;
D O I：
10.1016/j.jnoncrysol.2013.11.031
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The network-level structure of the GexAsyS100 (-) (x) (- y) glass family has been systematically investigated using Raman spectroscopy to probe the supported normal modes. More than 150 samples were melted in the ternary composition space, providing a detailed measure of the glass-forming region of the system. A Raman spectrum norinalization is proposed which permits semi-quantitative evaluation of the glass structure across the composition space of interest. This normalization is employed to compare the network structures evidenced in the chalcogen-rich and -poor regions, as well as the so-called "molecular" region. Application to the in-situ study of structural changes during heat treatment is also demonstrated. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：61 / 66
页数：6
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