Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates

被引:3
作者
Yang, MT
Chan, YJ
Shieh, JL
Chyi, JI
机构
[1] Natl Central Univ, Chungli
关键词
Carrier concentration - Charge carriers - Epitaxial growth - Heterojunctions - Molecular beam epitaxy - Performance - Semiconducting gallium arsenide - Semiconducting indium compounds - Semiconductor device structures - Semiconductor doping - Substrates - Transmission electron microscopy;
D O I
10.1109/55.511591
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on GaAs is proposed, which provides a large conduction-band discontinuity for a better carrier confinement, resulting in a high-carrier density, This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is always limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.
引用
收藏
页码:410 / 412
页数:3
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