Tight-binding calculations of electronic properties of AgI

被引:9
|
作者
Laref, A [1 ]
Sekkal, W
Zaoui, A
Certier, M
Aourag, H
机构
[1] Univ Sidi Bel Abbes, Dept Phys, Computat Mat Sci Lab, Sidi Bel Abbes 22000, Algeria
[2] LPLI, F-57058 Metz 3, France
关键词
D O I
10.1063/1.371382
中图分类号
O59 [应用物理学];
学科分类号
摘要
The empirical tight-binding method is used to calculate the electronic band structure, density of states, and dielectric response function of AgI. Effective masses of electrons and holes, and the refractive index are also calculated. The results are compared with other calculations. (C) 1999 American Institute of Physics. [S0021-8979(99)07120-0].
引用
收藏
页码:4435 / 4439
页数:5
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