Silicon photonics plasma-modulators with advanced transmission line design

被引:32
作者
Merget, Florian [1 ]
Azadeh, Saeed Sharif [1 ]
Mueller, Juliana [1 ]
Shen, Bin [1 ]
Nezhad, Maziar P. [1 ]
Hauck, Johannes [1 ]
Witzens, Jeremy [1 ]
机构
[1] Rhein Westfal TH Aachen, Integrated Photon Lab IPH, D-52074 Aachen, Germany
基金
欧洲研究理事会;
关键词
HIGH-SPEED; STRAINED SILICON; CMOS;
D O I
10.1364/OE.21.019593
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming the analog bandwidth limitations arising from cross-talk between signal lines in push-pull modulators and reducing the linear losses of the transmission lines. We experimentally validate the concepts and demonstrate an E/O -3 dBe bandwidth of 16 GHz with a 4V drive voltage (in dual drive configuration) and 8.8 dB on-chip insertion losses. Significant bandwidth improvements result from suppression of cross-talk. An additional bandwidth enhancement of similar to 11% results from a reduction of resistive transmission line losses. Frequency dependent loss models for loaded transmission lines and E/O bandwidth modeling are fully verified. (C) 2013 Optical Society of America
引用
收藏
页码:19593 / 19607
页数:15
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