A High-Power, Low-Loss W-band SPDT Switch Using SiGe PIN Diodes

被引:0
|
作者
Song, Peter [1 ]
Schmid, Robert L. [1 ]
Ulusoy, Ahmet Cagri [1 ]
Cressler, John D. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源
2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2014年
关键词
millimeter wave integrated circuits; single-pole double-throw; SPDT switch; PIN diode; SiGe; W-band;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a W-band SPDT switch implemented using PIN diodes in a new 90 nm SiGe BiCMOS technology. The SPDT switch achieves a minimum insertion loss of 1.4 dB and an isolation of 22 dB at 95 GHz, with less than 2 dB insertion loss from 77-134 GHz, and greater than 20 dB isolation from 79-129 GHz. The input and output return losses are greater than 10 dB from 73-133 GHz. By reverse biasing the off-state PIN diodes, the P-1dB is larger than +24 dBm. To the authors' best knowledge, these results demonstrate the lowest loss and highest power handling capability achieved by a W-band SPDT switch in any silicon-based technology reported to date.
引用
收藏
页码:195 / 198
页数:4
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