UV Enhanced NO2 Sensing Properties of Pt Functionalized Ga2O3 Nanorods

被引:4
作者
An, Soyeon [1 ]
Park, Sunghoon [1 ]
Mun, Youngho [1 ]
Lee, Chongmu [1 ]
机构
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
基金
新加坡国家研究基金会;
关键词
Ga2O3; Nanorod; Gas sensor; UV; Functionalization; GAS SENSORS; OXIDE; ZNO; NANOBELTS; NANOWIRES;
D O I
10.5012/bkcs.2013.34.6.1632
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ga2O3 one-dimensional (1D) nanostructures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Ga(2)O(3)nanostructures functionalized with Pt to NO2 gas at room temperature under UV irradiation were examined. The diameters of the 1D nanostructures ranged from a few tens to a few hundreds of nanometers and the lengths ranged up to a few hundreds of micrometers. Pt nanoparticles with diameters of a few tens of nanometers were distributed around a Ga(2)O(3)nanorod. The responses of the nanorods gas sensors fabricated from multiple networked Ga(2)O(3)nanorods were improved 3-4 fold at NO2 concentrations ranging from 1 to 5 ppm by Pt functionalization. The Pt-functionalized Ga2O3 nanorod gas sensors showed a remarkably enhanced response at room temperature under ultraviolet (UV) light illumination. In addition, the mechanisms via which the gas sensing properties of Ga(2)O(3)nanorods are enhanced by Pt functionalization and UV irradiation are discussed.
引用
收藏
页码:1632 / 1636
页数:5
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