Structural and morphological properties of β-Ga2O3 nanostructures synthesized at various deposition temperatures

Gallium oxide (Ga2O3) nanostructures (NSs) are grown on Si substrate via vapor-solid (VS) mechanism by the carbon-hydrogen reduction of gallium oxide powder in chemical vapor deposition (CVD) system. The NSs are synthesized at different deposition temperatures of 850 1150 degrees C with the apparent activation energy of 120.98 kJ/mol(1.24 eV/atom). The crystalline monoclinic phase is confirmed by high-resolution X-ray diffraction (HR-XRD). Field-emission scanning electron microscopy (FE-SEM) revealed that morphology of beta-Ga2O3 NSs comprises of nanoworms and nanowires. The Williamson-Hall (W-H) and Scherrer method are used to evaluate the size of crystallites and strain in the beta-Ga2O3 NSs. Crystallite size is observed to increase with deposition temperature as the crystallinity of the films improved. Physical parameters such as strain, mot-mean-square strain, dislocation density and texture coefficient values are calculated from the XRD results. Elemental composition investigated by energy dispersive X ray (EDX) reveal strong peaks of Ga and O without impurities. The photo-detection behavior of the material demonstrates remarkable response to 365 nm (2.09 mW/cm(2)) light.