Structural and dielectric properties of Ba(X1/3Ta2/3)O3 thin films grown by RF-PLD

被引：6

作者：

Nedelcu, L. ^{[1
]}

Scarisoreanu, N. D. ^{[2
]}

Chirila, C. ^{[1
]}

Busuioc, C. ^{[1
,3
]}

Banciu, M. G. ^{[1
]}

Jinga, S. I. ^{[3
]}

Dinescu, M. ^{[2
]}

机构：

[1] Natl Inst Mat Phys, Bucharest 077125, Romania

[2] Natl Inst Laser Plasma & Radiat Phys, Bucharest 077125, Romania

[3] Univ Politehn Bucuresti, Bucharest 011061, Romania

来源：

APPLIED SURFACE SCIENCE | 2013年 / 278卷

关键词：

Complex perovskites; Thin films; RF-PLD; X-ray diffraction; Dielectric properties; MICROWAVE; CERAMICS; PEROVSKITES; RESONATORS;

D O I：

10.1016/j.apsusc.2012.10.124

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ba(X1/3Ta2/3)O-3 (X = Mg, Zn) thin films were grown on commercial Pt-coated Si substrates by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) method. Single phase Ba(Mg1/3Ta2/3)O-3 and Ba(Zn1/3Ta2/3)O-3 ceramic targets having an ordered hexagonal structure (with P (3) over bar m1 space group) were used for deposition. Structural, morphological and surface characterizations of the Ba(X1/3Ta2/3)O-3 (BXT) films were performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray diffraction studies evidenced a cubic (disordered) perovskite structure, with unit cell typical for Pm3m space group. Scanning electron microscopy investigations showed that BXT films have a columnar microstructure, which is oriented perpendicular to the substrate. The temperature dependence of the dielectric permittivity of the films was recorded at 100 kHz. Unlike targets, the BXT films exhibit positive values of the temperature coefficient of the dielectric permittivity. BaMg1/3Ta2/3O3 and BaZn1/3Ta2/3O3 thin films with dielectric constant of about 22.5 and 25, respectively have been obtained. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：158 / 161

页数：4

共 21 条

[1] Ba(Zn1/3Ta2/3)O3 Ceramics for Microwave and Millimeter-wave Applications [J].