Millimeter-wave INP DHBT power amplifier based on power-optimized cascode configuration

被引：1

作者：

Johansen, Tom K. ^{[1
]}

Yan, Lei ^{[1
]}

Dupuy, Jean-Yves ^{[2
]}

Nodjiadjim, Virginie ^{[2
]}

Konczykowska, Agnieszka ^{[2
]}

Riet, Muriel ^{[2
]}

机构：

[1] Tech Univ Denmark, Dept Elect Engn, DK-2800 Lyngby, Denmark

[2] Joint Lab Bell Labs Thales Res & Technol & CEA LE, Labs 3 5, F-91461 Marcoussis, France

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2013年 / 55卷 / 05期

关键词：

heterojunction bipolar transistor; millimeter-wave; monolithic microwave integrated circuit; power amplifier;

D O I：

10.1002/mop.27477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter describes the use of a power-optimized cascode configuration for obtaining maximum output power at millimeter-wave (mm-wave) frequencies for a two-way combined power amplifier (PA). The PA has been fabricated in a high-speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 m2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power-added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode configuration at mm-wave frequencies are confirmed by both simulations and experimental results. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:11781182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477

引用

页码：1178 / 1182

页数：5

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