Ionoluminescence induced by swift heavy ions in silica and quartz: A comparative analysis

被引：20

作者：

Jimenez-Rey, D. ^{[1
]}

Pena-Rodriguez, O. ^{[1
,2
]}

Manzano-Santamaria, J. ^{[1
,3
,4
]}

Olivares, J. ^{[1
,2
]}

Munoz-Martin, A. ^{[1
]}

Rivera, A.

Agullo-Lopez, F. ^{[1
]}

机构：

[1] Univ Autonoma Madrid, Ctr Microanal Mat, E-28049 Madrid, Spain

[2] CSIC, Inst Opt, E-28006 Madrid, Spain

[3] Euratom CIEMAT Fus Assoc, Madrid, Spain

[4] Univ Politecn Madrid, Inst Fus Nucl, E-28006 Madrid, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 286卷

关键词：

Ion irradiation; Ion damage; Swift heavy ions; SiO2; Silica; Quartz; SELF-TRAPPED EXCITONS; TUNNELING STATES; LUMINESCENCE; RADIATION; SIO2; IRRADIATION; DEFECTS; ENERGY;

D O I：

10.1016/j.nimb.2011.12.025

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ionoluminescence (IL) of the two SiO2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10 MeV and Br at 15 MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power S-e is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9 eV (652 nm) and 2.7 eV (459 nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：282 / 286

页数：5

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