Electro-Thermal Simulation for High Power IGBTs for Automotive Applications

被引:0
|
作者
Kempitiya, Asantha [1 ]
Chou, Wibawa [1 ]
机构
[1] Infineon Technol Amer Corp, 101 N Sepulveda Blvd, El Segundo, CA 90245 USA
关键词
RELIABILITY; INVERTER;
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
Safe and reliable operation of power electronics in a particular application hinges on the accurate design of thermal management systems that perform the task of heat removal from the devices. This requirement reaches paramount importance for IGBTs and Diodes used in high power automotive applications where ambient temperatures under the hood exceed 65 degrees C. This work demonstrates in-depth system analysis via developed electro-thermal models that take into account both semiconductor losses and the overall system thermal stack-up. This knowledge not only allows design engineers to ensure proper operation of the device in a particular application but also evaluate the reliability of the silicon, bondwires and thermal interfaces of the package due to thermal stresses induced over various worst case converter operating conditions.
引用
收藏
页码:58 / 62
页数:5
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