Massless Dirac fermions in III-V semiconductor quantum wells

被引：18

作者：

Krishtopenko, S. S. ^{[1
,2
]}

Desrat, W. ^{[1
]}

Spirin, K. E. ^{[2
]}

Consejo, C. ^{[1
]}

Ruffenach, S. ^{[1
]}

Gonzalez-Posada, F. ^{[3
]}

Jouault, B. ^{[1
]}

Knap, W. ^{[1
]}

Maremyanin, K., V ^{[2
]}

Gavrilenko, V., I ^{[2
]}

Boissier, G. ^{[3
]}

Torres, J. ^{[3
]}

Zaknoune, M. ^{[4
]}

Tournie, E. ^{[3
]}

Teppe, F. ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, Lab Charles Coulomb, F-34095 Montpellier, France

[2] Inst Phys Microstruct RAS, GSP 105, Nizhnii Novgorod 603950, Russia

[3] Univ Montpellier, CNRS, Inst Elect & Syst, F-34000 Montpellier, France

[4] Lille Univ, Inst Elect Microelect & Nanotechnol, Ave Poincare,BP 60069, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 2019年 / 99卷 / 12期

基金：

俄罗斯科学基金会;

关键词：

PERSISTENT PHOTOCONDUCTIVITY; INAS/ALSB HETEROSTRUCTURES; CYCLOTRON-RESONANCE; INTERFACE; MOBILITY; SPECTRA;

D O I：

10.1103/PhysRevB.99.121405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the G point of the Brillouin zone. Analysis of experimental data within an analytical Dirac-like Hamiltonian allows us not only to determine the velocity (v(F) = 1.8x10(5) m/s) of massless Dirac fermions, but also to demonstrate a significant nonlinear dispersion at high energies.

引用

页数：6

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