Extremely high-density GaAs quantum dots grown by droplet epitaxy

被引：33

作者：

Jo, M. ^{[1
]}

Mano, T. ^{[1
]}

Sakuma, Y. ^{[1
]}

Sakoda, K. ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Photon Mat Unit, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 21期

基金：

日本学术振兴会;

关键词：

(311)A; LAYERS; SIZE;

D O I：

10.1063/1.4721663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of extremely high-density GaAs quantum dots (QDs) by droplet epitaxy. We investigated the dependence of temperature and coverage on the dot density. As a result, an areal density of 7.3 x 10(11) cm(-2) was achieved at a growth temperature of 30 degrees C by controlling the amount of Ga. The QDs showed clear luminescence even when grown at a low temperature of 30 degrees C. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721663]

引用

页数：3

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