Metal-insulator transition in n-3C-SiC epitaxial films

被引：7

作者：

Lebedev, A. A. ^{[1
]}

Abramov, P. L. ^{[1
]}

Agrinskaya, N. V. ^{[1
]}

Kozub, V. I. ^{[1
]}

Lebedev, S. P. ^{[1
]}

Oganesyan, G. A. ^{[1
]}

Tregubova, A. S. ^{[1
]}

Shamshur, D. V. ^{[1
]}

Skvortsova, M. O. ^{[2
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

doping profiles; electrical conductivity; magnetoresistance; metal-insulator transition; semiconductor doping; semiconductor epitaxial layers; silicon compounds; surface topography; wide band gap semiconductors; X-ray topography;

D O I：

10.1063/1.3065989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper reports a study of galvanomagnetic properties of n-3C-SiC/n-6H-SiC heterostructures at liquid-helium temperatures. 3C-SiC epitaxial layers were grown by sublimation epitaxy in a vacuum on the (0001)C face of 6H-SiC substrates produced by the Lely method and 4H-SiC substrates grown by modified Lely method. The x-ray topography demonstrated the high quality structure of the epitaxial layers and the absence of any transition regions between 3C-SiC epitaxial layer and substrate. The low-temperature conductivity and magnetoresistance of the films have been studied as functions of their doping level and structural quality. It was found that the metal-insulator transition occurs in the n-3C-SiC layer at concentrations N-d-N-a <= 3x10(17) cm(-3).

引用

页数：5

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