Electrical properties and devices of large-diameter single-walled carbon nanotubes

被引：120

作者：

Javey, A ^{[1
]}

Shim, M ^{[1
]}

Dai, HJ ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1448850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Individual large-diameter (similar to3 to 5 nm) semiconducting single-walled carbon nanotubes (SWNTs) are found to exhibit ambipolar field-effect transistor (FET) behavior, with easily accessible n- and p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs in this relatively large-diameter regime. The ambipolar SWNT-FETs can be readily used as building blocks for functional nanoelectronic devices such as voltage inverters that operate under ambient conditions. (C) 2002 American Institute of Physics.

引用

页码：1064 / 1066

页数：3

共 21 条

[1] Logic circuits with carbon nanotube transistors [J].