Epitaxial recrystallization and luminescence of CaAl2O4:Eu2+ thin films prepared on sapphire substrates

被引:3
作者
Kim, Dai-Hong [2 ,3 ]
Lee, Choong Ki [4 ]
Lee, Jun Seong [1 ]
Hong, Seong-Hyeon [2 ,3 ]
Kim, Young Jin [1 ]
机构
[1] Kyonggi Univ, Dept Mat Sci & Engn, Suwon 443760, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
[3] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151742, South Korea
[4] GS Nanotech Co Ltd, GS Caltex New Energy Dev Ctr, Seoul 134848, South Korea
关键词
Epitaxial growth; Calcium aluminates; Luminescence; Phosphors; Thin films; PHOSPHORS; MECHANISMS;
D O I
10.1007/s10832-012-9709-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Eu2+ doped CaAl2O4 thin films were prepared on c-, a-, and r-plane sapphire substrates by a sputtering method, and then post-annealed for the recrystallization. Post-annealed films have out-of-plane epitaxial orientations of (010) and (001) CaAl2O4 on c- and a-plane sapphire substrates, respectively, whereas the films on r-plane were composed of two epitaxial phases of (210) CaAl2O4 and (210) CaAl4O7. In-plane relationships between films and substrates were also determined by an X-ray pole figure method, demonstrating that the films were epitaxially recrystallized, but not single crystals. The emission wavelengths were independent of the orientations of epitaxial films, showing a blue emission at 448 nm under 325 nm excitation, but the emission intensity depended on the film structure.
引用
收藏
页码:36 / 40
页数:5
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