Construction of CdS/Sb2Se3 planar heterojunction by full vapor transport deposition

被引：5
作者：
Lin, Wen-Wei [1 ]
Wang, Ning-Wei [1 ]
Lan, Ze-Ying [2 ]
Fu, Zhe [1 ]
Huang, Zhi-Ping [1 ]
Lin, Li-Mei [1 ,2 ]
Ye, Qing-Ying [1 ]
Chen, Shui-Yuan [2 ]
Chen, Gui-Lin [1 ,2 ]
机构：
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Engn Technol Res Ctr Solar Energy, Fuzhou 350117, Peoples R China
[2] Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Peoples R China
来源：
VACUUM | 2022年 / 206卷
基金：
中国国家自然科学基金;
关键词：
CdS thin Film; Vapor transport deposition; Sb2Se3; Solar cells; SOLAR-CELLS;
D O I：
10.1016/j.vacuum.2022.111544
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we develop a vapor transport deposition (VTD) technology to prepare CdS film with tetragonal phase for the first time, and then construct a CdS/Sb2Se3 planar heterojunction by full VTD tactics. Compared with the CdS synthesized by traditional chemical bath deposition (CBD), the CdS-VTD has superior crystalline, conductivity and lower Urbach energy, which also induces the growth orientation of Sb2Se3 and has a favorable energy level matching structure with Sb2Se3. With the improved carrier transport efficiency, finally, the built carbon-based Sb2Se3 device delivers an efficiency of 4.91%, obviously improved by 15.8% than Sb2Se3 device with CdS-CBD (4.24%), which is the champion Sb2Se3 device with full VTD process and pave a successive way for the construction of CdS/Sb2Se3 planar heterojunction.
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页数：6
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