Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

被引：15

作者：

Bubel, S. ^{[1
]}

Meyer, S. ^{[1
]}

Kunze, F. ^{[1
]}

Chabinyc, M. L. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; CARRIER TRANSPORT; GATE DIELECTRICS; SEMICONDUCTOR;

D O I：

10.1063/1.4824022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that are high enough to reach the TFL, we use an ionic liquid tape gate. Performing capacitance voltage measurements to determine the accumulated charge during TFT operation, we find the TFL at biases higher than predicted by the electronic structure of crystalline ZnO. We conclude that the density of states in the conduction band of a-ZnO is higher than in its crystalline state. Furthermore, we find no indication of percolative transport in the conduction band but trap assisted transport in the tail-states of the band. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 44 条

[1] Simple Analytical Model of On Operation of Amorphous In-Ga-Zn-O Thin-Film Transistors [J].

Abe, Katsumi ;

Kaji, Nobuyuki ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hirano, Masahiro ;

Hosono, Hideo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (10) :3463-3471

[2] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].

AMBEGAOKAR, V ;

HALPERIN, BI ;

LANGER, JS .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2612-+

[3] Model for determination of mid-gap states in amorphous metal oxides from thin film transistors [J].

Bubel, S. ;

Chabinyc, M. L. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (23)

[4] Trap states and space charge limited current in dispersion processed zinc oxide thin films [J].

Bubel, S. ;

Mechau, N. ;

Hahn, H. ;

Schmechel, R. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)

[5] Electronic properties of polyvinylpyrrolidone at the zinc oxide nanoparticle surface PVP in ZnO dispersions and nanoparticulate ZnO thin films for thin film transistors [J].

Bubel, Simon ;

Mechau, Norman ;

Schmechel, Roland .

JOURNAL OF MATERIALS SCIENCE, 2011, 46 (24) :7776-7783

[6]

Busch C., 2011, MAT P, V1359, P71

[7]

Busch C., 2012, NANOSCI TECHNOL, V79, P387

[8]

CHIANG T, 1989, ELECT STRUCTURE SO A, V23

[9] High-capacitance ion gel gate dielectrics with faster polarization response times for organic thin film transistors [J].

Cho, Jeong Ho ;

Lee, Jiyoul ;

He, Yiyong ;

Kim, BongSoo ;

Lodge, Timothy P. ;

Frisbie, C. Daniel .

ADVANCED MATERIALS, 2008, 20 (04) :686-+

[10] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].

COPELAND, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&

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