Optical characterization of Eu-doped β-Ga2O3 thin films

被引：66

作者：

Gollakota, P.

Dhawan, A.

Wellenius, P.

Lunardi, L. M.

Muth, J. F. ^{[1
]}

Saripalli, Y. N.

Peng, H. Y.

Everitt, H. O.

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA

[3] Duke Univ, Dept Phys, Durham, NC 27708 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2208368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Europium-doped beta-Ga2O3 thin films were grown on double-side polished c-axis (0001) sapphire substrates by pulsed laser deposition at 850 degrees C. Transmission measurements of the films revealed a sharp band edge with a band gap at 5.0 eV. The films exhibited intense red emission at 611 nm (2.03 eV) due to the transitions from D-5(0) to F-7(2) levels in europium, with intensities that increased with the concentration of europium. Time-resolved photoluminescence measurements revealed a temperature-insensitive lifetime of 1.4 ms, which is much longer than the lifetimes of europium luminescence observed in GaN hosts. (c) 2006 American Institute of Physics.

引用

页数：3

共 17 条

[1] Spectra and dynamics of monoclinic Eu2O3 and Eu3+:Y2O3 nanocrystals [J].