Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode

The p-CuI/n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal gamma-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C-2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C-2 versus voltage curve imply that the built-in potential V-bi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current. This heterojunction diode can be good used for light emission devices and photovoltaic devices.