In this work we investigate the potential of inline single side wet-etch processing for rear side emitter removal and edge isolation for large area p-type Passivated Emitter and Rear (PERC) silicon solar cells. We focus on the integration of this process in flows leading to shallow emitters and screen printed front contacts and to deep, highly ohmic emitters in association with Cu contacts. The inherent advantage of this process, beside high throughput, is the external gettering performed by full emitter etch at the rear side. This is particularly relevant in the case of two-step emitter formation process, where removal of phosphorus diffused layers is most effective when performed prior to the high temperature drive-in step. Another effect that we make use of is the front-side emitter etch back performed by the etch bath vapors, which can be used to tune the phosphorus surface concentration and thus the emitter sheet resistance. Using this process, we report efficiency up to 19.9% for CZ large-area, homogeneous-emitter, screen printed cells, and 20.4% for CZ, large-area Cu plated cells. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.
