Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films

被引：18

作者：

Boy, Johannes ^{[1
]}

Handwerg, Martin ^{[1
]}

Ahrling, Robin ^{[1
]}

Mitdank, Ruediger ^{[1
]}

Wagner, Guenter ^{[2
]}

Galazka, Zbigniew ^{[2
]}

Fischer, Saskia F. ^{[1
]}

机构：

[1] Humboldt Univ, Novel Mat Grp, Newtonstr 15, D-12489 Berlin, Germany

[2] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany

来源：

APL MATERIALS | 2019年 / 7卷 / 02期

关键词：

GROWTH; POWER;

D O I：

10.1063/1.5084791

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped beta-Ga2O3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of S beta-Ga2O3-Al = (-300 +/- 20) mu V/K. At high bath temperatures T > 240 K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between T = 100 K and T = 300 K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Stratton's formula. The influence of different scattering mechanisms on the magnitude of the Seebeck coefficient is discussed and compared with Hall measurement results. (C) 2019 Author(s).

引用

页数：6

共 33 条

[1]

Ahrling R., ARXIV180800308V3

[2] Recent progress in the growth of β-Ga2O3 for power electronics applications [J].

Baldini, Michele ;

Galazka, Zbigniew ;

Wagner, Guenter .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 78 :132-146

[3] Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films [J].

Barasheed, Abeer Z. ;

Kumar, S. R. Sarath ;

Alshareef, H. N. .

JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (26) :4122-4127

[4] Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications [J].

Bierwagen, Oliver .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (02)

[5] Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage [J].

Chabak, Kelson D. ;

Moser, Neil ;

Green, Andrew J. ;

Walker, Dennis E. ;

Tetlak, Stephen E. ;

Heller, Eric ;

Crespo, Antonio ;

Fitch, Robert ;

McCandless, Jonathan P. ;

Leedy, Kevin ;

Baldini, Michele ;

Wagner, Gunter ;

Galazka, Zbigniew ;

Li, Xiuling ;

Jessen, Gregg .

APPLIED PHYSICS LETTERS, 2016, 109 (21)

[6] Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy [J].

Fiedler, A. ;

Schewski, R. ;

Baldini, M. ;

Galazka, Z. ;

Wagner, G. ;

Albrecht, M. ;

Irmscher, K. .

JOURNAL OF APPLIED PHYSICS, 2017, 122 (16)

[7] Czochralski growth and characterization of β-Ga2O3 single crystals [J].

Galazka, Z. ;

Uecker, R. ;

Irmscher, K. ;

Albrecht, M. ;

Klimm, D. ;

Pietsch, M. ;

Bruetzam, M. ;

Bertram, R. ;

Ganschow, S. ;

Fornari, R. .

CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (12) :1229-1236

[8] β-Ga2O3 for wide-bandgap electronics and optoelectronics [J].

Galazka, Zbigniew .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (11)

[9] Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method [J].

Galazka, Zbigniew ;

Uecker, Reinhard ;

Klimm, Detlef ;

Irmscher, Klaus ;

Naumann, Martin ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Bertram, Rainer ;

Ganschow, Steffen ;

Bickermann, Matthias .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (02) :Q3007-Q3011

[10] On the bulk β-Ga2O3 single crystals grown by the Czochralski method [J].

Galazka, Zbigniew ;

Irmscher, Klaus ;

Uecker, Reinhard ;

Bertram, Rainer ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Naumann, Martin ;

Schulz, Tobias ;

Schewski, Robert ;

Klimm, Detlef ;

Bickermann, Matthias .

JOURNAL OF CRYSTAL GROWTH, 2014, 404 :184-191

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