Ferroelectric Pb(Zr,Ti)O3 capacitors for nonvolatile FeRAM application

被引：0
|
作者：
Hase, T [1 ]
Noguchi, T [1 ]
Miyasaka, Y [1 ]
机构：
[1] NEC Corp Ltd, Funct Mat Res Labs, Tokyo, Japan
来源：
NEC RESEARCH & DEVELOPMENT | 1999年 / 40卷 / 02期
关键词：
ferroelectric thin film; PZT(Pb(Zr; Ti)O-3); fatigue; imprint; sol-gel; 2T2C cell;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fatigue, thermal imprint and switching behavior were investigated on PZT capacitors with Ir/IrO3 or Pt electrodes and with various Zr/Ti ratios. Fatigue endurance was drastically improved by using Ir/IrO2 far both top and bottom electrodes. The PZT capacitors with atop Ir/IrO2 and a bottom Pt/Ti were almost fatigue-free up to 10(8) cycles and the use of Ir/IrO2 for both top and bottom electrodes further improved the fatigue endurance up to 10(11) cycles. It was concluded that the most suitable Zr/Ti ratio for the 2T2C memory cell was 40/60 because of its high bit line voltage and fatigue endurance. The life time of the PZT capacitors for 75 degrees C storage was expected to be 23 years from the extrapolated value of the internal bias voltage.
引用
收藏
页码：210 / 213
页数：4
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