Effect of deposition time on structural, electrical and optical properties of Aluminium doped ZnO thin films by RF magnetron sputtering

被引:18
作者
Tondare, Rajkumar S. [1 ]
Shivaraj, B. W. [1 ]
Narasimhamurthy, H. N. [1 ]
Krishna, M. [1 ]
Subramanyam, T. K. [2 ]
机构
[1] RV Coll Engn, Dept Mech Engn, Bengaluru 560059, India
[2] RV Coll Engn, Interdisciplinary Res Ctr, Bengaluru 560059, India
关键词
AZO thin films; Deposition time; RF magnetron sputtering; Transmittance; Resistivity; ZINC-OXIDE FILMS; AZO; TEMPERATURE; GAS;
D O I
10.1016/j.matpr.2018.01.052
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent conducting aluminium doped ZnO (AZO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering at 200 degrees C substrate temperature, 150 W of power with various deposition times from 10 minutes to 90 minutes and maintaining working pressure of 2 x 10(-3) mbar and 100 mm electrode distance. The structural, electrical and optical properties were studied using XRD, TEM, UV-VIS-NIR Spectrophotometer and four-point probe tester. The (002) diffraction peak of AZO thin films was obtained at Braggs angle of 34.40 degrees which exhibited the hexagonal wurtzite structure of ZnO with c-axis orientation. Electrical resistivity of 1.9 x 10(-3) Omega cm and average optical transmittance of 89.7 % in the visible region was obtained for the deposition time of 10 minutes. The optical band gap decreased from 3.48 to 3.013 eV with increase in deposition time. (C) 2018 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of International Conference on Advanced Materials and Applications (ICAMA 2016).
引用
收藏
页码:2710 / 2715
页数:6
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