Recombination in Cu(In, Ga)Se2 thin-film solar cells containing ordered vacancy compound phases

被引：15

作者：

Cho, Yunae ^{[1
]}

Kim, Dong-Wook ^{[1
]}

Ahn, SeJin ^{[2
]}

Nam, Dahyun ^{[3
]}

Cheong, Hyeonsik ^{[3
]}

Jeong, Guk Yeong ^{[2
]}

Gwak, Jihye ^{[2
]}

Yun, Jae Ho ^{[2
]}

机构：

[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

[2] Korea Inst Energy Res, Photovolta Res Ctr, Taejon 305343, South Korea

[3] Sogang Univ, Dept Phys, Seoul 121742, South Korea

来源：

THIN SOLID FILMS | 2013年 / 546卷

关键词：

CIGS thin film; Solar cells; Ordered vacancy compound; Recombination; CUINSE2;

D O I：

10.1016/j.tsf.2013.04.078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the transport and photovoltaic properties of Cu-deficient Cu(In1-xGax)Se-2 (CIGS) thin-film solar cells containing ordered vacancy compound (OVC) layers. Raman spectra clearly revealed that the CIGS thin films with lower Cu concentrations contained larger volumes of OVC layers. The temperature-dependent inverse ideality factor showed that the CIGS film containing more (less) OVC layers exhibited tunneling-mediated bulk (interface)-dominated recombination. The capacitance-voltage characteristics and admittance spectra showed that the CIGS cells containing more OVC layers had more uniform carrier concentration near the junction and less interfacial trap states compared with cells with less OVC layers. These results suggested that the Cu-deficiency and the resulting OVC layer formation reduced the interfacial defect density and suppressed the interface recombination processes of the CIGS solar cells. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：358 / 361

页数：4

共 16 条

[1] Structural and chemical investigations of CBD- and PVD-CdS buffer layers and interfaces in Cu(In,Ga)Se2-based thin film solar cells [J].