Area-Efficient Low-Cost Low-Dropout Regulators Using MOS Capacitors

被引:0
作者
Aminzadeh, Hamed [1 ]
Lotfi, Reza [1 ]
Mafinezhad, Khalil [1 ]
机构
[1] Ferdowsi Univ Mashhad, EE Dept, Integrated Syst Lab, Mashhad, Iran
来源
2008 INTERNATIONAL SYMPOSIUM ON SYSTEM-ON-CHIP, PROCEEDINGS | 2008年
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Traditional design of low-dropout regulators offer the use of metal-insulator-metal (MIM) compensation capacitors to prevent instability in the absence of load capacitor with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively changed according to the value of load current. The idea has been applied to stabilize a 1.2V, 100mA low-dropout regulator in a 0.18 mu m CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100pF MOS output capacitor and no ESR.
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页码:29 / 32
页数:4
相关论文
共 6 条
[1]  
AMIZADEH H, 2007, IET DESIGN AUTOMATIO, P427
[2]  
Kwok KC, 2002, 2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL IV, PROCEEDINGS, P735
[3]   A capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation [J].
Leung, KN ;
Mok, PKT .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (10) :1691-1702
[4]   Full on-chip CMOS low-dropout voltage regulator [J].
Milliken, Robert J. ;
Silva-Martinez, Jose ;
Sanchez-Sinencio, Edgar .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (09) :1879-1890
[5]   Active capacitor multiplier in Miller-compensated circuits [J].
Rincon-Mora, GA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (01) :26-32
[6]   Design of low-voltage MOSFET-only ΣΔ modulators in standard digital CMOS technology [J].
Tille, T ;
Sauerbrey, J ;
Mauthe, M ;
Schmitt-Landsiedel, D .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2004, 51 (01) :96-109