In Situ Current Determination of a-Si/μc-Si Tandem Solar Cells via Transmission Measurements During Silicon PECVD

被引：1

作者：

Meier, Matthias ^{[1
]}

Merdzhanova, Tsvetelina ^{[1
]}

Paetzold, Ulrich W. ^{[1
]}

Muthmann, Stefan ^{[1
]}

Mueck, Andreas ^{[1
]}

Schmitz, Ralf ^{[1
]}

Gordijn, Aad ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Photovolta, D-52425 Julich, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2012年 / 2卷 / 02期

关键词：

In situ diagnostic; silicon; solar cells; tandem cells; thin film; a-Si:H; mu c-Si:H; MICROCRYSTALLINE SILICON; TRANSITION; DEPOSITION; THICKNESS;

D O I：

10.1109/JPHOTOV.2011.2179413

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In situ optical transmission measurements performed during thin-film silicon plasma-enhanced chemical vapor deposition (PECVD) are presented. Hereto, the plasma emission was used as light source. With this setup information about thickness, crystallinity and absorption characteristic of the growing intrinsic silicon thin film can be obtained. By integrating the intrinsic layers in solar cells with p-i-n configuration, the layer information gained in situ during the PECVD process can be directly correlated to the generated short-circuit current of the solar cell. The intention of this paper is to show that, by using these transmission measurements for the estimation of solar cell currents, an in situ current matching of stacked a-Si/mu c-Si tandem devices is possible, which is a useful extension of the process control techniques.

引用

页码：77 / 82

页数：6

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