Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

被引：48

作者：

Wang, Daisy Q. ^{[1
]}

Klochan, Oleh ^{[1
]}

Hung, Jo-Tzu ^{[1
]}

Culcer, Dimitrie ^{[1
]}

Farrer, Ian ^{[2
,3
]}

Ritchie, David A. ^{[2
]}

Hamilton, Alex R. ^{[1
]}

机构：

[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England

[3] Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England

来源：

NANO LETTERS | 2016年 / 16卷 / 12期

基金：

英国工程与自然科学研究理事会; 澳大利亚研究理事会;

关键词：

III-V semiconductor; quantum dot; heavy hole; spin-orbit interaction; Pauli spin blockade; NANOWIRE;

D O I：

10.1021/acs.nanolett.6b03752

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here, we present electrical transport measurements on holes in a gate defined double quantum dot in a GaAs/AlxGa1-xAs heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.

引用

页码：7685 / 7689

页数：5

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