Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas

被引：30

作者：

Miyawaki, Yudai ^{[1
]}

Kondo, Yusuke ^{[1
]}

Sekine, Makoto ^{[1
]}

Ishikawa, Kenji ^{[1
]}

Hayashi, Toshio ^{[1
]}

Takeda, Keigo ^{[1
]}

Kondo, Hiroki ^{[1
]}

Yamazaki, Atsuyo ^{[2
]}

Ito, Azumi ^{[2
]}

Matsumoto, Hirokazu ^{[2
]}

Hori, Masaru ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] ZEON Corp, Ctr Res & Dev, Kawasaki, Kanagawa 2109507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 01期

关键词：

HIGH-DENSITY PLASMA; HIGH-ASPECT-RATIO; CFX+ X=1,2,3 ION; RADICAL DENSITIES; DIELECTRIC ETCH; SILICON DIOXIDE; FILM DEPOSITION; CHF3; PLASMA; FLUOROCARBON; MECHANISMS;

D O I：

10.7567/JJAP.52.016201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C5HF7) gas with addition of O-2 and dilution in Ar gas, highly selective etching of SiO2 at selectivities of 40 against Si3N4 and 57 against polycrystalline Si was realized. Gas phase fluorocarbon species containing H atoms such as CxHFy (x > 2) played key roles in the selective deposition of thick hydrofluorocarbon films that covered the Si3N4 and polycrystalline silicon (poly-Si) surfaces and in the selective etching of SiO2 over the photoresist, SiN, and Si. (C) 2013 The Japan Society of Applied Physics

引用

页数：9

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