Investigation of ICP Parameters for Smooth TSVs and Following Cu Plating Process in 3D Integration

被引：0

作者：

Chiang, Cheng-Hao ^{[1
]}

Hu, Yu-Chen ^{[1
]}

Chen, Kuo-Hua ^{[2
]}

Chiu, Chi-Tsung ^{[2
]}

Chuang, Ching-Te ^{[1
]}

Hwang, Wei ^{[1
]}

Chiou, Jin-Chern ^{[1
,3
]}

Tong, Ho-Ming ^{[2
]}

Chen, Kuan-Neng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Adv Semicond Engn Grp, Kaohsiung, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.

引用

页数：4

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