Investigation of ICP Parameters for Smooth TSVs and Following Cu Plating Process in 3D Integration

被引:0
作者
Chiang, Cheng-Hao [1 ]
Hu, Yu-Chen [1 ]
Chen, Kuo-Hua [2 ]
Chiu, Chi-Tsung [2 ]
Chuang, Ching-Te [1 ]
Hwang, Wei [1 ]
Chiou, Jin-Chern [1 ,3 ]
Tong, Ho-Ming [2 ]
Chen, Kuan-Neng [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Adv Semicond Engn Grp, Kaohsiung, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源
2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT) | 2012年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.
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页数:4
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