Defect formation and crystallization in a-Si:H induced by Si+ implantation

被引：0

作者：

Golikova, OA ^{[1
]}

Bogdanova, EV

Kuznetsov, AN

Domashevskaya, EP

Terekhov, VA

Rahimov, NR

Mavlyanov, KY

机构：

[1] Ioffe Inst, Lab Phys Semiconducting Devices, St Petersburg 194021, Russia

[2] Voronezh State Univ, Dept Solid State, Voronezh 394693, Russia

[3] Namangan State Univ, Dept Tech & Phys, Namagan 716019, Uzbekistan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(02)00938-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of Si+ keV-ion implantation on the a-Si:H film structure and electronic parameters have been investigated. It is shown how defect formation in the films and their crystallization after the implantation depend on the initial material characteristics: Fermi level position. deposition-induced defect density, SiH bonding, disorder degree and nanocrystalline inclusions in an amorphous matrix. (C) 2002 Published by Elsevier Science B.V.

引用

页码：783 / 787

页数：5

共 10 条

[1] Some electronic and metastability properties of a new nanostructured material:: hydrogenated polymorphous silicon [J].

Butté, R ;

Meaudre, R ;

Meaudre, M ;

Vignoli, S ;

Longeaud, C ;

Kleider, JP ;

Cabarrocas, PRI .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1999, 79 (07) :1079-1095

[2]

GALLONE R, 1998, J NONCRYST SOLIDS, V114, P271

[3]

GOLIKOVA OA, 1991, SOV PHYS SEMICOND+, V25, P915

[4] Changes in short- and medium-range order in a-Si:H induced by light-soaking, pseudodoping and doping with boron [J].

Golikova, OA ;

Kazanin, MM ;

Kudoyarova, VK ;

Adriaenssens, GJ ;

Eliat, A .

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 :619-623

[5] Structure and electronic parameters of a-Si:H deposited by DC-MASD [J].

Golikova, OA ;

Kuznetsov, AN ;

Kudoyarova, VK ;

Kazanin, MM ;

Adriaenssens, GJ ;

Herremans, H .

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 :519-524

[6]

GRABOSH G, 1997, 14 EUR PHOT SOL EN A, V35, P8

[7] SOLID-PHASE CRYSTALLIZATION OF THIN-FILMS OF SI PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].

MASAKI, Y ;

LECOMBER, PG ;

FITZGERALD, AG .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) :129-134

[8]

NAKATA N, 1995, MATER RES SOC S P, V377, P173

[9]

TEREKHOV VA, 1994, THESIS VORONEZH

[10] Structural properties depicted by optical measurements in hydrogenated polymorphous silicon [J].

Vignoli, S ;

Butté, R ;

Meaudre, R ;

Meaudre, M ;

Cabarrocas, PRI .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (44) :8749-8757

← 1 →