Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

被引：117

作者：

Kishino, Katsumi ^{[1
,2
]}

Nagashima, Kazuya ^{[1
]}

Yamano, Kouji ^{[1
]}

机构：

[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan

[2] Sophia Univ, Sophia Nanotechnol Res Ctr, Chiyoda Ku, Tokyo 1028554, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.7567/APEX.6.012101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the monolithic integration of green and orange InGaN-based nanocolumn light-emitting diodes (LEDs). Four nanocolumn LED crystals (LEDs 1 to 4), which consisted of regularly arranged InGaN-based nanocolumns in a triangular lattice of 400 nm lattice constant, were grown on the same GaN template on a (0001) sapphire substrate, with designed nanocolumn diameters D of 150, 190, 230, and 270 nm for LEDs 1-4, respectively. LEDs 1 to 3 operated under DC current injection at room temperature, emitting at 544, 583, and 597 nm, respectively. This experiment paves the way for the monolithic integration of three-primary-color nanocolumn LEDs. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 23 条

[1] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy [J].

Calleja, E ;

Sánchez-García, MA ;

Sánchez, FJ ;

Calle, F ;

Naranjo, FB ;

Muñoz, E ;

Jahn, U ;

Ploog, K .

PHYSICAL REVIEW B, 2000, 62 (24) :16826-16834

[2] 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Enya, Yohei ;

Yoshizumi, Yusuke ;

Kyono, Takashi ;

Akita, Katsushi ;

Ueno, Masaki ;

Adachi, Masahiro ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Ikegami, Takatoshi ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2009, 2 (08)

[3] Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy -: The influence of Si- and Mg-doping [J].

Furtmayr, Florian ;

Vielemeyer, Martin ;

Stutzmann, Martin ;

Arbiol, Jordi ;

Estrade, Sonia ;

Peiro, Francesca ;

Morante, Joan Ramon ;

Eickhoff, Martin .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (03)

[4] Integrated light-emitting diodes grown by MOVPE for flat panel displays [J].

Honda, Tohru ;

Kobayashi, Toshiaki ;

Egawa, Shinichi ;

Sawada, Masaru ;

Sugimoto, Koichi ;

Baba, Taichi .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 :736-739

[5] InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111)Si substrate [J].

Kikuchi, A ;

Kawai, M ;

Tada, M ;

Kishino, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (12A) :L1524-L1526

[6] InGaN/GaN nanocolumn LEDs emitting from blue to red [J].

Kishino, K. ;

Kikuchi, A. ;

Sekiguchi, H. ;

Ishizawa, S. .

GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473

[7]

Kishino K., 2012, INT WORKSH NITR SEM

[8] Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 μm [J].

Kishino, Katsumi ;

Kamimura, Jumpei ;

Kamiyama, Kouichi .

APPLIED PHYSICS EXPRESS, 2012, 5 (03)

[9] Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays [J].

Kishino, Katsumi ;

Sekiguchia, Hiroto ;

Kikuchi, Akihiko .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2063-2068

[10]

Lewis JR, 2004, IEEE SPECTRUM, V41, P24

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