Monolithic Bidirectional Switch (MBS) - A novel MOS-based power device

被引：3

作者：

Baus, M ^{[1
]}

Ali, MZ ^{[1
]}

Winkler, O ^{[1
]}

Spangenberg, B ^{[1
]}

Lemme, MC ^{[1
]}

Kurz, H ^{[1
]}

机构：

[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Halbleitertech, D-52074 Aachen, Germany

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel MOS-based power device, the Monolithic Bidirectional Switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.

引用

页码：473 / 476

页数：4

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