共 19 条
Next Nearest Neighbors Effects on Berry Curvature of Graphene
被引:2
作者:

Farajollahpour, T.
论文数: 0 引用数: 0
h-index: 0
机构:
Fac Sci, Dept Phys, Ihu Tehran, Iran Fac Sci, Dept Phys, Ihu Tehran, Iran

Rezvani, A. H.
论文数: 0 引用数: 0
h-index: 0
机构:
Fac Sci, Dept Phys, Ihu Tehran, Iran Fac Sci, Dept Phys, Ihu Tehran, Iran

Khodarahmi, M. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Fac Sci, Dept Phys, Ihu Tehran, Iran Fac Sci, Dept Phys, Ihu Tehran, Iran

Arasteh, M.
论文数: 0 引用数: 0
h-index: 0
机构:
Fac Sci, Dept Phys, Ihu Tehran, Iran Fac Sci, Dept Phys, Ihu Tehran, Iran
机构:
[1] Fac Sci, Dept Phys, Ihu Tehran, Iran
关键词:
ELECTRONIC-PROPERTIES;
PHASE;
D O I:
10.12693/APhysPolA.122.180
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
In this paper energy bands and Berry curvature of graphene was studied. Desired Hamiltonian regarding the next-nearest neighbors was obtained by tight-binding model. By using the second quantization approach, the transformation matrix is calculated and the Hamiltonian of system is diagonalized. With this Hamiltonian, the band structure and wave function can be calculated. By using calculated wave function the Berry connection and Berry curvature of our system are calculated. Our results are exactly consistent with previous methods and also the Berry curvature throughout the Brillouin zone get zero.
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页码:180 / 183
页数:4
相关论文
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