Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell

被引：15

作者：

Cho, Young Joon ^{[1
]}

Cha, Hamchorom ^{[1
]}

Chang, Hyo Sik ^{[1
]}

机构：

[1] Chungnam Natl Univ, Grad Sch Energy Sci & Technol, Daejeon 305764, South Korea

来源：

SURFACE & COATINGS TECHNOLOGY | 2016年 / 307卷

关键词：

Si solar cell; Surface passivation; Atomic layer deposition; Plasma nitridation; Al2O3; Carrier lifetime; Plasma-enhanced chemical vapor deposition; SURFACE PASSIVATION; FILMS; RECOMBINATION;

D O I：

10.1016/j.surfcoat.2016.05.057

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the effect of plasma nitridation of atomic layer deposition (ALD) Al2O3 films of crystalline Si wafers. Nitridation using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition for various RF plasma powers was performed on Al2O3 to form aluminum oxynitride (AlON). The plasma nitridation of the Al2O3 layer grown by ALD demonstrated a significant improvement in the passivation performance of a crystalline silicon solar cell. Indeed, the best values of open-circuit voltage and carrier lifetime for the AlON film at 400 W were 660 mV and 200 mu s, respectively. The results of this experiment indicate that utilization of AlON film is a feasible means of improving the passivation performance of crystalline Si solar cells. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1096 / 1099

页数：4

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