Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive layers - art. no. 072909

被引：59
作者：
Kim, YS [1 ]
Jo, JY
Kim, DJ
Chang, YJ
Lee, JH
Noh, TW
Song, TK
Yoon, JG
Chung, JS
Baik, SI
Kim, YW
Jung, CU
机构：
[1] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[3] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea
[4] Univ Suwon, Dept Phys, Suwon 445743, Gyunggi, South Korea
[5] Soongsil Univ, Dept Phys, Seoul 156743, South Korea
[6] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[7] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, Gyunggi, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期
关键词：
D O I：
10.1063/1.2174100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high-quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor.
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页数：3
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  • [1] Ferroelectricity at the nanoscale: Local polarization in oxide thin films and heterostructures
    Ahn, CH
    Rabe, KM
    Triscone, JM
    [J]. SCIENCE, 2004, 303 (5657) : 488 - 491
  • [2] Easy collective polarization switching in ferroelectrics
    Bratkovsky, AM
    Levanyuk, AP
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (21) : 4614 - 4617
  • [3] Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitor
    Chen, B
    Yang, H
    Zhao, L
    Miao, J
    Xu, B
    Qiu, XG
    Zhao, BR
    Qi, XY
    Duan, XF
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (04) : 583 - 585
  • [4] The influence of an extrinsic interfacial layer on the polarization of sputtered BaTiO3 film -: art. no. 202905
    Cho, YW
    Choi, SK
    Rao, GV
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
  • [5] Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition
    Cillessen, JFM
    Prins, MWJ
    Wolf, RM
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) : 2777 - 2783
  • [6] Ferroelectricity in ultrathin perovskite films
    Fong, DD
    Stephenson, GB
    Streiffer, SK
    Eastman, JA
    Auciello, O
    Fuoss, PH
    Thompson, C
    [J]. SCIENCE, 2004, 304 (5677) : 1650 - 1653
  • [7] Thickness-dependent dielectric constants of (Ba,Sr)TiO3 thin films with Pt or conducting oxide electrodes
    Hwang, CS
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 432 - 437
  • [8] Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films
    Jia, CL
    Contreras, JR
    Schubert, J
    Lentzen, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) : 381 - 386
  • [9] Critical thickness for ferroelectricity in perovskite ultrathin films
    Junquera, J
    Ghosez, P
    [J]. NATURE, 2003, 422 (6931) : 506 - 509
  • [10] Polarization dynamics and retention loss in fatigued PbZr0.4Ti0.6O3 ferroelectric capacitors
    Kang, BS
    Yoon, JG
    Noh, TW
    Song, TK
    Seo, S
    Lee, YK
    Lee, JK
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (02) : 248 - 250
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